Dr. Michournyi Vyatcheslav Andreevich


Education

1990 Doctor of Science (the highest scientific degree in the Russia) in Physics of Semiconductors and Dielectrics. Thesis title: "AlGaP, GaInP, GaInAsP, GaInAsSb, AlGaAsSb Solid Solutions and Heterostructures on Their Basis." Diploma Doctor  of Science.

1975 Candidate of Science (equivalent to Ph.D.) in Physics of Semiconductors and Dielectrics. Thesis title: "Growth and Investigation of GaInP and AlGaP Solid Solutions". Supervisor: Noble Prize Winner, Academician Zh.I.Alferov. Diploma Candidate of Science.

1994-present Universidad Autonomia de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica. San Luis Potosi. Mexico. Field of activity: Different types of III-V solid solutions and relevant heterostructures and devices.


Honors and Awards

1998 Regular member of the Mexican Academy of Science.


Summary of Research Activity

Research activities since 1970 up to now are connected with different types of III - V solid solutions and relevant heterostructures and devices. During this period such as GaInP, AlGaP, GaInAsP, GaInAsSb, AlGaAsSb solid solutions have been grown by LPE. Crystallization processes and phase diagrams of these systems have been investigated both theoretically and experimentally. The reasons for differences in theoretical and experimental data in the phase diagrams have been explained. Series of methods have been proposed for accuracy increasing during the phase diagrams investigation and enlarging parameter's recreation while growing various heterostructures. Original growth technology of GaInAsSb and AlGaAsSb from Sb - enriched liquid phases have been suggested and worked out. Characteristics and parameters of the epitaxial layers and heterostructures have been studied by I-V, C-V, microprobe techniques, photoluminescence, and electro-luminescence. The post-growth fabrication technologies of the different devices were developed. 

The results of these research works were published or presented in the more than 150 publications and patents, including 5 book, 4 reviewers' and chapters in the books, 95 articles and proceedings of congresses, 21 patents, more than 80 conferences. My citation index to day is more than 200 (A-type) and more than 100 (B-type). 19 of my article were used and cited in the  different encyclopedias and reference books.


Students

Ph.D 3

Master of Science thesis 15


List of Publicactions Books

1. Viatcheslav Andreevich Mishurnyi, Alfonso Lastras Martinez. "Laseres Semiconductor". Universidad Autonoma de San Luis Potosi. Editoral Universitaria Potosina. (ISBN: 968-7674-82-2) 2010.
2. V.A.Mishurnyi. "Thermodynamic and Phase Diagrams". (In Russian). Sankt - Petersburg Polytechnic University Publishing House. (ISBN: 978-5-7422-3331-2) 2012.
3. Viatcheslav Andreevich Mishurnyi, Alfonso Lastras Martinez. "Heterolaseres de Semiconductor". Editoral Academica Española. (ISBN: 978-3-8454-8676-5) 2012.
4.  V.A.Mishurnyi. "Crystal Growth". (In Russian). Sankt - Petersburg Polytechnic University Publishing House. (ISBN: 978-5-7422-4663-3) 2014.

5.  Viatcheslav Andreevich Mishurnyi, Hugo Ricardo Navarro Contreras. "Termodinámica y diagramas de fases" Editorial Trillas. (ISBN: 978-607-172459-5) 2015.


Articles and Proceeding of the Conferences:

1. Zh.I.Alferov, D.Z.Garbuzov, Yu.V.Zhlyaev, S.G.Konnikov, P.S.Kop'ev, V.A.Mishurnyi, and D.N.Tret'yakov. "Photoluminescence of solid - solutions GaP - GaAs, AlAs - GaAs, and GaP - InP in transition area of composition from the direct to the indirect band structure."  Int. Conf. of Luminescence (ICL). Leningrad.  USSR 1972. Proc. of ICL. p.93.

2. Zh.I.Alferov, D.Z.Garbuzov, S.G.Konnikov, P.S.Kop'ev, V.A.Mishurnyi, D.Rumyantsev, and D.N.Tret'yakov."Photoluminescence of epitaxial GaxIn1-xP solid - solution films of compositions 0.3<x<1."  Sov. Phys. Semicond. 7(3). 1973. p.435. (ISSN: 1063-7826)

3. I.N.Arsent'ev, V.A.Mishurnyi, V.D.Rumyantsev, and D.N.Tret'yakov. "The possibility of producing the ideal heterojunctions in GaxInyAl1-x-yP solid solutions."  Conf. of Young Scientists. Erevan. USSR 1973. Proc. of Conf. p.74.              

4. Zh.I.Alferov, S.G.Konnikov, V.A.Mishurnyi, D.N.Tret'yakov, and T.B.Godlinnik. "Electron - beam  microprobe analysis of epitaxial GaxIn1-xP solid solutions." Int. Conf. "Microprobe - 73." Berlin. GDR 1973. Proc. of Conf. p.(M.66).

5. Zh.I.Alferov, S.G.Konnikov, V.A.Mishurnyi, D.N.Tret'yakov, T.B.Godlinnik. "Electron -beam microprobe analysis of epitaxial GaxIn1-xP solid solutions." Kristall and Technik. 8(9). 1973. p.1029. 

6.  Zh.I.Alferov, D.Z.Garbuzov, S.G.Konnikov, P.S.Kop'ev, V.A.Mishurnyi. "Luminescence of epitaxial films of AlxGa1-xP solid solutions with 0<x<0.85." Sov. Phys. Semicond. 7(11). 1974. p.1449.  (ISSN: 1063-7826)

7.  Zh.I.Alferov, D.Z.Garbuzov, V.A.Mishurnyi, V.D.Rumyantsev, and D.N.Tret'yakov. "Luminescence of GaxIn1-xP solid solutions with 0.45<x<0.5." Sov. Phys. Semicond. 7(12). 1974. p.2305. (ISSN: 1063-7826)

8. Zh.I.Alferov, S.G.Konnikov, V.A.Mishurnyi, D.N.Tret'yakov. "The GaxIn1-xP solid solutions investigation by electron - beam microprobe." Apparatus and methods of the X - ray analysis." XIII. 1974. p.194.

9.  Zh.I.Alferov, I.N.Arsent'ev, D.Z.Garbuzov, V.A.Mishurnyi, V.D.Rumyantsev, and D.N.Tret'yakov. "Electroluminescence of p-n-junctions in Ga0.5In0.5P solid solutions." Sov. Phys. Semicond. 8(1).1974. p.137. (ISSN: 1063-7826)

10. D.Z.Garbuzov, P.S.Kop'ev, and V.A.Mishurnyi. "Free exitons in the luminescence  spectra of undoped GaP and GaP : In and GaP : Al." Sov. Phys. Semicond. 8(2). 1974. p.270. (ISSN: 1063-7826)                          

11. D.Z.Garbuzov, S.G.Konnikov, P.S.Kop'ev, and V.A.Mishurnyi. "Influence of the concentration of indium on the energy spectrum of nitrogen in wide - gap GaxIn1-xP (x > 0.9) solid solutions." Sov. Phys. Semicond. 8(8). 1975. p.998. (ISSN: 1063-7826)

12. V.A.Mishurnyi. "Epitaxial growth of GaInP solid solutions." Int. Conf. "Solid   Solutions". Reinhardsburg. GDR 1975. Proc. of Conf. p.199.                                                

13. Zh.I.Alferov, I.N.Arsent'ev, D.Z.Garbuzov, V.A.Mishurnyi, V.D.Rumyantsev, and T.P.Fedorenko. "Stimulated emission from optically excited epitaxial GaxIn1-xP solid solutions." Sov. Phys. Semicond. 8(9). 1975. p.1175. (ISSN: 1063-7826)

14.  A.V.Abramov, I.N.Arsent'ev, V.A.Mishurnyi, V.D.Rumyantsev, and D.N.Tret'yakov. "Luminescent properties and growth of GaxIn1-xP solutions from melts." Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki). 2(3). 1976. p.78. (ISSN: 1063-7850)      

15. P.Dias, V.A.Mishurnyi, E.L.Portnoi, B.S.Ryvkin, and V.B.Smirnitskii. "Dispersion characteristics of the refractive index of AlxGa1-xP solid solutions." Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki). 3(7). 1977. p.290. (ISSN: 1063-7850)

16.  E.N.Arutyunov, V.A.Mishurnyi, E.L.Portnoi, and V.Z.Pyataev. "Double - heterostructure electrooptic stripe modulator GaP - AlxGa1-xP."  Conf. "Further Developments of Optoelectronics". Moscow. USSR 1977. Proc. of Conf. p.115. 

17. E.N.Arutyunov, V.A.Mishurnyi, E.L.Portnoi, and V.Z.Pyataev. "Three - layers heteroepitaxial D-a waveguide."  Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki).  3(8). 1977. p.327. (ISSN: 1063-7850)

18. Zh.I.Alferov, E.N.Arutyunov, V.A.Mishurnyi, E.L.Portnoi, and V.Z.Pyataev. "GaP-AlxGa1-xP double - heterostructure stripe electrooptic modulator." Sov. Tech. Phys. 3(9). 1977. p.362.

19.  A.V.Abramov, V.A.Mishurnyi, D.N.Tret'yakov. "Growth and investigation of epitaxial  solid solutions in the GaP - AlP system."  Conf. " Further Developments of Optoelectronics." Moscow. USSR 1977. Proc. of Conf. p.17. 

20. A.V.Abramov, V.A.Mishurnyi, D.N.Tret'yakov. "Method of temperature measurement in the LPE  boat."  II Conf. of Phys. Process in Semicond. Heterostructutres. Ashkhabad. USSR 1978. Proc. of Conf. p.143.

21. M.B.Ivanov, M.N.Mizerov, V.A.Mishurnyi, E.L.Portnoi, V.Z.Pyataev. "Characteristics of the stripe - geometry electrooptic modulator on base of GaP - AlGaP heterostructure."  II Conf. on  Phys. Process in Semicond. Heterostructures. Ashkhabad. USSR 1978. Proc. of Conf. p.1.                                  

22. Zh.I.Alferov, E.N.Arutyunov, V.I.Kolyshkin, V.I.Kuchinskii, V.A.Mishurnyi, and E.L.Portnoi. "Influence of the oxygen ion penetration depth at the characteristics of AlAs - GaAs stripe - geometry heterolasers." IX Conf. "Coherent and nonlinear optics". Leningrad.USSR 1978. Proc. of Conf. p.118. 

23. M.B.Ivanov, M.N.Mizerov, V.A.Mishurnyi, E.L.Portnoi, and V.Z.Pyataev. "Characteristics of stripe - geometry electrooptic modulator with a GaP - AlGaP heterostructure." Sov. Jour. Tech. Phys. 24(3). 1979. p.364.

24. A.V.Abramov, V.A.Mishurnyi, D.N.Tret'yakov. "Calculation of Al-Ga-In-P liquid phase composition for isoperiodical cross - section." Conf. on Physics. Baku. USSR 1979. Proc. of Conf. p.77.                                                     

25. D.Akhmedov, N.P.Bezhan, V.I.Kuchinskii, V.A.Mishurnyi, E.L.Portnoi. "Peculiarities of the epitaxial growth of the InGaAsP solid solutions and heterostructures on their base." V Regional Conf. on Physics. Baku. USSR 1980. Proc. of Conf. p.85.

26. I.N.Arsent'ev, D.Akhmedov, S.G.Konnikov, V.A.Mishurnyi, and V.E.Umansky. "Influence of mismatch between the lattice constant and thermal expansion coefficients on the luminescent emitted by GaxIn1-xP - GaAs heterostructures."  Sov. Phys. Semicond. 14(12). 1980. p.1389. (ISSN: 1063-7826)           

27. D.Akhmedov, N.P.Bezhan, V.I.Kuchinskii, V.A.Mishurnyi, E.L.Portnoi, E.V.Russu, and V.B.Smirnitskii. "InGaAsP/InP heterojunction laser with corrugated waveguide  layer."  Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki).  6(6). 1980. p.305. (ISSN: 1063-7850)                    

28. A.V.Abramov, D.Akhmedov, I.Ismailov, V.A.Mishurnyi, D.N.Tret'yakov. "Methodical peculiarities the In-Ga-P phase diagram investigation."  Avtometrya. 6. 1980. p.64.

29. D.Akhmedov, N.P.Bezhan, N.A.Bert, S.G.Konnikov, V.I.Kuchinskii, V.A.Mishurnyi, and E.L.Portnoi. "Effect of internal strain on the polarization of the emission in InP - InGaAsP heterojunction laser structures." Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki).  6(6). 1980. p.304. (ISSN: 1063-7850)

30. D.Akhmedov, V.G.Danil'chenko, M.Z.Zhingarev, V.I.Korol'kov, and V.A.Mishurnyi. "Heterojunction phototransistors made of InGaAsP solid solution."  Sov. Phys. Semicond. 16(2). 1982. p.235. (ISSN: 1063-7826)

31. D.Akhmedov, V.I.Kuchinskii, V.A.Mishurnyi, E.L.Portnoi, and E.V.Russi. "Low - threshold  InGaAsP/InP heterojunction lasers for the spectra interval 1.5-1.6 mm."  Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki).  8(2). 1982. p.104. (ISSN: 1063-7850)

32.  D.Z.Garbuzov, V.P.Chalyi, V.A.Mishurnyi, D.Akhmedov, V.V.Agaev, and V.P.Evtikhiev. "Temperature dependencies of the thresholds of InGaAsP - InP double heterostructures lasers (l= 1.5 mm) in case of optical and current excitation on nonequilibrium carriers." Sov. Phys. Semicond. 16(5). 1982. p.543. (ISSN: 1063-7826)

33. V.I.Vasil'ev, S.G.Konnikov, V.I.Kuchinskii, M.N.Mizerov, V.A.Mishurnyi, and E.L.Portnoi. "Optical properties of In1-xGaxAs1-ySby." Conf. on Semicond. Physics. Baku. USSR 1982. Proc. of  Conf. p.123.

34. K.G.Kalandarashvilli, S.Yu.Karpov, V.I.Kuchinskii, V.A.Mishurnyi, M.I.Nemenov, E.L.Portnoi. "InGaAsP heterolasers waveguide confinement."  Annual Conf. on Physical Processes in Semicond. Heterostructure. Odessa. USSR 1983.  Proc. of Conf. p.14. 

35. K.Fronts, V.I.Kuchinskii, A.S.Lazutka, N.I.Maiorova, V.A.Mishurnyi, E.L.Portnoi, and V.B.Smirnitskii. "Tunable distributed - feedback semiconductor laser pumped by a heterostructure  injection laser."  Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki).  9(9). 1983. p.448. (ISSN: 1063-7850) 

36.  S.Yu.Karpov, Yu.V.Koval'chuk, V.I.Kuchinskii, A.S.Lazutka, N.I.Maiorova, V.A.Mishurnyi, E.L.Portnoi, and V.B.Smirnitskii. "Semiconductor laser (l = 1.55 mm) with first - order distributed feedback produced by pulsed laser annealing."  Sov. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki).  9(11). 1983. p.555. (ISSN: 1063-7850)

37. S.N.Aleksandrov, V.I.Vasil'ev, F.I.Dimov, V.I.Kuchinskii, A.S.Lazutka, V.A.Mishurnyi, and V.B.Smirnitskii. "Generation of coherent light and waveguide confinement in GaSb – GaxIn1-xSb1-yAsy heterostructures."  Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki).  10(9). 1984. p.457. (ISSN: 1063-7850)

38. N.A.Bert, V.I.Vasil'ev, S.G.Konnikov, V.I.Kuchinskii, A.S.Lazutka, V.A.Mishurnyi, and E.L.Portnoi. "Lattice mismatch and photoluminescence intensity in GaInSbAs/GaSb heterostructures." Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki). 11(2). 1985. p.78. (ISSN: 1063-7850)

39. N.A.Bert, V.I.Vasil'ev, S.G.Konnikov, V.A.Mishurnyi, and V.P.Chalyi. "Internal deformation and luminescence properties of InGaAsSb/GaSb."  X Conf. on Semicond. Physics. Minsk. USSR 1985. Proc. of Conf. p.158.                                                                                                                                                                40. V.I.Kuchinskii, N.I.Maiorova, V.A.Mishurnyi, E.L.Portnoi, B.V.Pushnyi, V.B.Smirnitskii, and A.S.Usikov. "InGaAsP/InP distributed - feedback injection heterostructure laser (l = 1.5 mm) fabricated by liquid - phase and gas - phase epitaxy." Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki). 12(3). 1986. p.122. (ISSN: 1063-7850)                                          

41. K.Fronts, N.I.Maiorova, V.A.Mishurnyi, V.I.Kuchinskii, E.L.Portnoi, and V.B.Smirnitskii. "Refractive index of GaInAsP solid solutions at the lasing wavelength." Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki). 12(7). 1986. p.342. (ISSN: 1063-7850)                                      

42. K.Gonsales, P.Dias, V.A.Mishurnyi, E.L.Portnoi, and V.B.Smirnitskii. "Heteroepitaxial AlxGa1-xP waveguides with a parabolic index profile for hybrid integrated optic systems."  Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki).  13(9). 1987. p.458. (ISSN: 1063-7850) 

43. V.I.Vasil'ev, S.G.Konnikov, V.A.Mishurnyi, A.N.Faleev, L.I.Flaks, V.P.Chalyi. "Luminescence and X - ray investigation InGaAsSb solid solution." XII Conf. on Microelectronics. Tbilisi. USSR 1987. Proc. of Conf. p.201.

44. V.I.Vasil'ev, V.V.Kuznetsov, and V.A.Mishurnyi. "Thermodynamic peculiarities of epitaxial growth GaInAsSb and AlGaAsSb from Sb - enriched solutions." IV Conf. of  Thermodynamics and Semiconductor Materials. Moscow. USSR 1989. Proc. of Conf. p.162.                           

45. V.I.Vasil'ev, V.V.Kuznetsov, V.A.Mishurnyi. "Epitaxial growth InGaAsSb solid solutions with Sb as a solvent."  Sov. Nonorganic Materials. 26(1). 1990. p.23.

46. V.I.Vasil'ev, N.D.Il'inskaya, D.V.Kuksenkov, V.I.Kuchinskii, V.A.Mishurnyi, V.V.Sazonov, V.B.Smirnitskii, and N.N.Faleev. "Distributed - feedback injection heterojunction lasers in the system InGaAsSb/GaSb."  Sov. Tech. Phys. Lett. (Pis'ma v Zhurnal Tekhnicheskoi Fiziki). 16(1). 1990. p.67. (ISSN: 1063-7850)

47. V.I.Vasil'ev, V.V.Kuznetsov, V.A.Mishurnyi, V.V.Sazonov and N.N.Faleev. "Epitaxial growth of InGaAsSb and AlGaAsSb from Sb - enriched solutions." Crystal Properties and Preparation 32-34. 1991. p. 659-663.

48. V.I.Vasil'ev, N.D.Il'inskaya, D.V.Kuksenkov, V.I.Kuchinskii, V.A.Mishurnyi, V.V.Sazonov, V.B.Smirnitskii, and N.N.Faleev. "Distributed - feedback injection heterojunction lasers in the system InGaAsSb/GaSb." In the book "Best of Soviet Semiconductor Physics and Technology 1989-1990". M.E. Levinshtein. M.Shur. World Scientific 1995 p.555.

49. I.E.Berishev, F.De Anda, V.A.Mishurnyi, J.Olvera, N.D.Il'yinskaya, V.I.Vasil'ev. "H2O2:HF: C4O4H6(tartaric acid) : H2O etching system for chemical polishing of GaSb."  J. Electrochem. Sos. 142(10). 1995. p.L189 - L191.               

50. I.E.Berishev, A.Yu.Gorbachev, V.A.Mishurnyi, N.D.Il'inskaia, A.L.Stankevich, I.S.Tarasov. "Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (l = 1.3 mm) and InGaAsP/GaAs (l = 0.8 mm) laser diodes." Appl. Phys. Lett. 68(9). 1996. p.1186 - 1188. 

51. V.A.Mishurnyi, A.Yu.Gorbachev, I.E.Berishev. "Laseres Semiconductores."  CIENCIA.  47(3). 1996. p.239 - 249

52. V.A.Mishyrnyi, F.De Anda, A.Yu.Gorbachev, V.I.Vasil'ev, N.N.Faleev. "InGaAsSb growth from Sb-rich solutions." Journal of Crystal Growth. 180. 1997. p.34 - 39. (ISSN: 0022-0248.  I.F.: 1.757)

53. V.A.Mishurnyi, F. de Anda, A.Yu. Gorbatchev, V.I.Vasil'ev, V.M.Smirnov, N.N.Faleev. "Multicomponent Sb-based Solid Solutions Grown from Sb - rich Liquid Phases." 24th International Symposium on Compound Semiconductors. IEEE, New York, USA. 1998. Pros. of Conf. p.37 - 40.

54. V.A.Mishurnyi, F.De Anda, A.Yu. Gorbatchev, V.I.Vasil'ev, V.M.Smirnov, N.N.Faleev. "AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions." Crystal Reserch and Technology. 33. 1998. p.457 - 464.

55. V.A.Mishurnyi, F.De Anda, A.Yu. Gorbatchev, I.C.Hernandez del Castillo, J Nieto Navarro. "A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers." Journal of Electronic Materials. 27. 1998. p.1003 - 1004.

56. I.E.Berichev, A.Yu. Gorbatchev, I.C.Hernandez del Castillo, Ortiz Ma.Isabel, Rdz. Pedroza G., V.A.Mishurnyi. "Obtenecion e investigacion de heteroestructuras lasers InGaAsP/GaAs y InGaAsP/InP con emision de onda de 0.8 mm. y 1.3 mm." Revista Mexicana de Fisica. 44(3).1998. p.282 - 289.

57. V.A.Mishurnyi, A.Yu.Gorbatchev, I.C.Hernandez del Castillo. "Laseres semiconductores Principios de su funcionamento." CIENCIA y DESARROLLO. XXIV(140). 1998. p.9 - 17.

58. V.A.Mishurnyi, A.Yu.Gorbatchev, A.Lastras Martinez, I.C.Hernandez del Castillo. "Laseres semiconductores, basados en heterouniones." CIENCIA y DESARROLLO. XXV (144). 1999. p.18 - 25.

59. V.A.Mishurnyi, A.Yu. Gorbatchev, A. Lastras Martinez, I.C.Hernandez del Castillo. "Laseres semiconductores III. Materiales para su construccion." CIENCIA y DESARROLLO. XXV (149). 1999. p.25 - 35.

60. V.A.Mishurnyi, F. de Anda, I.C.Hernandez del Castillo, A.Yu.Gorbatchev. "Temperature determination by solubility measurements and study of evaporation of volatile components in LPE." Thin Solid Films. 340. 1999. p.24 - 27.

61. V.A.Mishurnyi, F. de Anda, A.Yu.Gorbatchev, and V.I.Vasil'ev. "Some Perspectives and Peculiarities of the LPE Growth of Multicomponent Sb-Based Solid Solutions from Pentanary Liquid Phases." Journal of Electronic Materials. 28. 1999. p.959 - 962.

62. J. Olvera-Hernandez, F.de Anda, H.Navarro-Contreras, V.A.Mishurnyi. "High purity GaSb growth by LPE in sapphire boat." Journal of Crystal Growth. 208. 2000. p.27 - 32. (ISSN: 0022-0248.  I.F.: 1.757)

63. E.Zamora, P.Díaz, S.Jimenez-Sandoval, C.González-Raña, T.A. Prutskij, V. Mishurnyi and A. Merkulov. "Micro-Raman Studies of AlxGa1-xP/GaP Graded Structures." Phys. Stat. Solid, B.  220. 2000. p.141 - 146.

64. Yu.Gorbatchev. V.A.Mishurnyi, F.de Anda. "Control of the Critical Supercooling in LPE." Journal of Electronic Materials. 29. 2000. p.1402 - 1405.

65. V.A.Mishurnyi, I.C.Hernandez del Castillo, A.Yu.Gorbatchev, A.Lastras Martinez. "Tecnologias Epitaxiales de Crecimiento de Cristales Semiconductores." Avance y Perspectiva. 21. 2002. p.21 - 31.

66.  Ruiz-Becerril, M.Hernandez-Sustaita, F.de Anda, V.A.Mishurnyi, A.Yu. Gorbatchev, L.Narvaez. "Some Experiments on the Growth of InTlSb by LPE." Journal of Crystal Growth. 241. 2002. p.101 - 107. (ISSN: 0022-0248.  I.F.: 1.757)

67. V.A.Mishurnyi, I.C.Hernandez del Castillo, A.Yu.Gorbatchev, A.Lastras Martinez. "Equilibrio de Fases y Procesos de Cristalizacion." Avance y Perspectiva. 21. 2002. p.205 - 213.

68. V.A.Mishurnyi, A.Yu Gorbatchev., A.Lastras Martinez. "Las Fibras Opticas: Fundamentos Fisicos." CIENCIA y DESARROLLO. XXIX (171), 2003. p.10 - 17.

69. R.Hernandez-Zarazua, M.Hernandez-Sustita, F.de Anda, V.A.Mishurnyi, A.Yu.Gorbatchev, R.Asomoza, Yu.Kudriavtsev, J.A.Godines. “Investigation of the Phase Diagram of the Pb-Ga-Sb system.” Thin Solid Films. 461. 2004. p. 233 - 236.

70. V.A.Mishurnyi, A.Yu.Gorbatchev, F.de Anda, J.Nieto Navarro. “Influence of the Baking on the Photoluminescence Spectra of In1-xGaxAsyP1-y Solid Solutions Grown on InP Substrates”. Revista Mexicana de Fisica. 50. 2004. p.216 - 220.

71. M.del P. Rodriguez-Torres, A.Yu.Gorbatchev, V.A.Mishurnyi, F.de Anda, V.H.Mendez-Garcia, R.Asomoza, Yu.Kudriavtsev,  I.C.Hernandez. "Investigation of the Composition Pulling or Lattice-Latching" Effect in LPE". Journal of Crystal Growth. 277. 2005. p.138 – 142. (ISSN: 0022-0248.  I.F.: 1.757)

72. Alfonso L.Martinez, Ismael L.Velazquez, Raul B.Navarro, Salvador Guel Sandoval,        V.Mishurnyi, A.Gorbatchev y Mario E. Lima. "Laseres Semiconductores: Tecnologia y Aplicaciones". Universitarios Potosinos. Nueva Epoca. Ano 1, 2, Junio 2005. p.18 - 23. (ISSN: 1870-1698)

73. V.H. Méndez-García, A. Lastras-Martínez, A.Yu Gorbachev, V.A. Mishurnyi, F.de Anda, M. López-López , and  M. Calixto-Rodríguez ."Effects of in-situ Annealing Processes of GaAs(100) Surfaces on the Molecular Beam Epitaxial Growth of InAs Quantum Dots". Superficies y Vacio. 18. 2. 2005. p.1 – 6 (ISSN: 1665-3521).

74. V.A.Elyukhin, L.P.Sorokina, V.A.Mishurnyi, and I.C.Hernandez. “Non-Equilibrium        Liquid Phase Heteroepitaxy of InxGa1-xP alloys on different substrates”. Journal of Crystal Growth. 291. 2006. p.325 - 327. (ISSN: 00220248.  I.F.: 1.757).

75. C. Hernandez, M. McElhinney, L. Zeng, and V.A. Mishourny  "High Quality of 830 nm Material Grown by SSMBE for Laser Device Printing Applications". Journal of Vacuum Science and Technology. 25. 3. 2007. p. 926 - 930. (ISSN:1071-1023. I.F.:1.43).

76. V.A.Mishurnyi, F.de Anda. "Perspectivas Generales de la Energia Solar" CIENCIA y        DESARROLLO. 33, (212). 2007. p. 26 - 33. (ISSN: 0185-0008).

 77. V.A.Mishurnyi, F.de Anda. "Fotoelementos Solares". CIENCIA y DESARROLLO. 33,       (212). 2007. p.34 - 43. (ISSN: 0185-0008).

78. V.A.Mishurnyi, F.de Anda. "Celdas Solares. Aspectos Tecnicos y Economicos".      CIENCIA y DESARROLLO. 33, (212). 2007. p.44 - 55. (ISSN: 0185-0008).

79. Y. Kudriatsev, A. Villegas, S. Gallardo, G. Ramirez, R. Asomoza, V. Mishurnuy. "Cesium Ion Sputtering with Oxygen Flooding: Experimental SIMS Study of Work Function Change". Applied Surface Science 254. 2008. p. 4961-4964. (ISSN: 0169-4332.  I.F.: 1.576)
80.  V. A. Mishurnyi, F. de Anda, A.Yu.Gorbatchev, Y.Kudriavtsev, V.A.Elyukhin, T. A       Prutskij, C.Pelosi, C.Bocchi, B.Y. Ber and F. E. Ortiz Vazquez. "Influence of Substrate Orientation on the Composition of Solid Solutions Grown by LPE and MOCVD". Thin Solid Films. 516,  2008.  p. 8092-8095. (ISSN: 0040-6090.  I.F.: 1.884)
81. V.A.Elyukhin, L.P.Sorokina, V.A.Mishurnyi, F. de Anda. "Self-assembling of 4C10Sn clusters in Ge co-doped with C and Sn". Physica E 40 2008. p.883-885. (ISSN: 1386-9477.  I.F.: 1.230)
82. C.Soubervielle-Montalo, V.Mishournyi, I.C.Hernandez, V.H.Mendez-Garcia. "Temperature Dependence of Photoluminiscence Oxygen-Related Deep Levels in Al0.2Ga0.2In0.5P:Be Grown by Solid Source Molecular Beam Epitaxy". Journal of Vacuum Science and Technology. 26. 3. 2008. p. 1089-1092. (ISSN: 1071-1023.  I.F.: 1.43)
83. F.E.Ortiz Vasquez, E.G.Castillo Baldivia, L.I.Espinosa Vega, V.A.Michournyi, A.Yu.Gorbatchev. "Implementacion de Tecnologias para Crecimiento de Puntos Cuanticos por LPE".  Edition of the IEEE. 6 Congreso Internacional en Innovación y Desarrollo Tecnologico, CIINDET 2008.
84. C. Soubervielle-Montalvo, V. Mishournyi, F. de Anda, A. Gorbatchev, I.C. Hernández, S. Gallardo, Y. Kudriatsev, M. López-López, V.H.Méndez-García. "Study of Oxygen Incorporation in Al0.2Ga0.2In0.5P:Be Layers Grown by MBE Employing a P-cracker cell". Journal of Crystal Growth. 311. 2009. p. 1650-1654. (ISSN: 00220248.  I.F.: 1.757)
85. F.E.Ortiz Vazquez, V.A.Mishurnyi, A.Yu.Gorbatchev, F. de Anda, V.A.Elyukhin. "GaInAs Quantum Dots (QD) Grown by Liquid Phase Epitaxy (LPE). Journal of Physics: Conference Series 167. 2009. 012002. p.1-5. (ISSN: 1742-6588.  I.F.: 1.900)
86. V.H.Compean, F. de Anda, V.A.Mishurnyi, A.Yu. Gorbatchev. "GaSb Growth from Sn Solvent at Low Temperatures by LPE". Journal of Physics: Conference Series 167. 2009. 012024. p.1-4. (ISSN: 1742-6588.  I.F.: 1.900)
87. V.A.Elyukhin, P.Rodriguez Peralta, V.A.Mishurnyi, F. de Anda. "Self-assembling conditions of 4C10Sn  nanoclusters in Ge  (C, Sn)". Physica B, 2009. p. 4509. v.404 (23-24)  (ISSN: 0921-4526.  I.F.: 0.822)
88. Ortiz F.E., Mishurnyi V., Gorbatchev A., De Anda F., Prutskij T. "Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates". Journal of Physics: Conference Series 274. 2011. 012115. p.1-4. (ISSN:1742-6588. I.F.:1900)

89. E.Momox Beristain, J.Olvera-Hernandez, J.Martinez-Juarez, F.de Anda, V.H.Compean-Jasso, V.A.Mishurnyi, V.H.Mendez-Garcia, G.Juarez-Diaz. "Effect of substrate conductivity on the thickness and composition of GaAlSb epitaxial layers grown by liquid phase Epitaxy". Thin Solid Films. 519.2011. p.3029-3031. (ISSN:0040-6090. I.F.:1.727)
90.  E. Momox-Beristain, J. Martínez-Juárez, F. de Anda, V.H. Compeán-Jasso, V.A. Mishurnyi, G. Juárez-Díaz. "Influence of substrate conductivity type on the thickness and composition of epitaxial layers grown by Liquid Phase Epitaxy". Thin Solid Films, 520. 2011. p.700-702.(ISSN:0040-6090.I.F.:1.727).
91. V. H. Compeán-Jasso, F. de Anda, V. A. Mishurnyi, A. Yu. Gorbatchev, T. Prutskij and Yu.Kudriavtsev. "Sn doped GaSb grown by liquid phase epitaxy". Thin Solid Films, 548. 2013. p.168-170. (ISSN: 0040-6090.  I.F.: 1.727)


Patents

1. V.A.Mishurnyi. Zh.I.Alferov, V.M.Andreev, D.Z.Garbuzov, S.G.Konnikov, P.S.Kop'ev, "Semiconductor optical quantum generator on base of heterostructur."  USSR Patent  423417 from 27.12.1971.

2.Zh.I.Alferov, V.A.Mishurnyi, and D.N.Tret'yakov. "Heterolaser."  USSR Patent   474304 from 03.05.1973.         

3. A.V.Abramov, V.A.Mishurnyi, D.N.Tret'yakov. "Temperature measurement method."  USSR  Patent  574632 from 11.02.1976.   

4. V.A.Mishurnyi et al. “Method of epitaxial structure growth.” USSR Patent  612551 from 03.01.1977.                                                                    

5. Zh.I.Alferov, V.A.Mishurnyi at al.  “Method of epitaxial structure produce.”   USSR Patent  668126 from 10.02.1975. 

6. Zh.I.Alferov, V.I.Kuchinskii, M.N.Mizerov, V.A.Mishurnyi, E.L.Portnoi.  “Semiconductor quantum generator.” USSR Patent 711983 from 06.03.1978.

 7. Zh.I.Alferov, E.N.Arutyunov, V.I.Kuchinskii, M.N.Mizerov, V.A.Mishurnyi at al.  “Injection laser.”  USSR Patent 782681 from 21.03.1978.

8. A.V.Abramov, M.G.Vasil’ev, V.A.Mishurnyi, at al. “Preparation of liquid-phase for the AlxA31-xB5 solid solutions growth.”  USSR Patent  841530 from 18.01.1980.

9. V.I.Kuchinskii, V.A.Mishurnyi, E.L.Portnoi, B.S.Ryvkin. “Sign and value of the lattice mismatch determination.” USSR Patent 886668 from 08.08.1980.

10.R.A.Charmakadze, V.A.Mishurnyi, A.I.Berdzenishvilli. “Method of composition determination for liquid  phase with evaporated component.”  USSR Patent  1025221 from 29.12.1980.                                      

11. S.A.Gurevich, M.N.Mizerov, V.A.Mishurnyi, E.L.Portnoi. “Hetrostructure production method.” USSR Patent  1042521 from 30.11.1981.

12. S.A.Gurevich, V.I.Kuchinskii, V.A.Mishurnyi, E.L.Portnoi, B.S.Yavich. “Injection laser.” USSR Patent 1083878 from 09.09.1982. 

13. Zh.I.Alferov, Yu.V.Koval’chuk, V.I.Kuchinskii, V.A.Mishurnyi, E.L.Portnoi.  “Method of production of heterostructure with distributed feedback.”  USSR Patent 1123470 from 14.03.1983. 

14. Yu.V.Koval’chuk, V.I.Kuchinskii, V.A.Mishurnyi, E.L.Portnoi. “Method of the quality control for the semiconductor  heterostructures.”  USSR Patent  1200784 from 30.03.1984.       

15. V.A.Mishurnyi, S.A.Nikishin, D.V.Sinyavskii. “Method of the measurement of noneqilibrium degree between liquid and solid phases.” USSR Patent 1300996 from 06.06.1985.

16. A.V.Abramov, V.A.Mishurnyi, D.N.Tret’yakov. “Method of the oxygen concentration measurement  in the liquid phase.” USSR Patent 1351191 from 14.06.1985.

17. I.Vasil’ev, V.V.Kuznetsov, V.A.Mishurnyi. “InGaAsSb epilayers growth method.”  USSR Patent  1540342 from 11.01.1988.                                                  

18. V.I.Vasil’ev, V.A.Mishurnyi. “AlxGa1-xAsySb1-y epitaxial structures growth method.” USSR  Patent 1561565 from 25.04.1988.

19. V.I.Vasil’ev, N.D.Il’inskaya, V.A.Mishurnyi. “Enchant for diffraction grating production.” USSR Patent 1614711 from 03.01.1989. 

20. V.I.Vasil’ev, V.A.Mishurnyi, V.V.Sazonov. “Injection laser method fabrication.”  USSR Patent 1664100 from 10.07.1989.

21.V.I.Vasil’ev, V.A.Mishurnyi, V.V.Sazonov. “Injection lasers fabrication method.” USSR Patent 1683470 from 10.07.1989.


email: slava@cactus.iico.uaslp.mx